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1 of 11 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2012, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . ordering information bifet hbt rf in pin 2,3 rf out / vds pin 6,7 gnd base vgs pin 1 rfha1000 50mhz to 1000mhz, 15w gan wideband power amplifier the rfha1000 is a wideband power amplifier designed for cw and pulsed applica- tions such as wireless infrastructure, radar, two way radios and general purpose amplification. using an advanced high power density gallium nitride (gan) semi- conductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. the rfha1000 is an input matched gan transistor packaged in an air cavity ceramic package which provides excellent therma l stability through the use of advanced heat sink and power dissipation technolo gies. ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. an exter- nal output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. features ? advanced gan hemt technology ? output power of 15w ? advanced heat-sink technology ? 50mhz to 1000mhz instantaneous bandwidth ? input internally matched to 50 ? ? 28v operation typical performance ? output power 41.5dbm ? gain 17db ? power added efficiency 60% ? -40c to 85c operating temperature ? large signal models available applications ? class ab operation for public mobile radio ? power amplifier stage for commercial wireless infrastructure ? general purpose tx amplification ? test instrumentation ? civilian and military radar ds120418 ? package: aln leadless chip carrier / so8 rfha1000 50mhz to 1000mhz, 15w gan wideband power ampli- fier rfha1000s2 2-piece sample bag rfha1000sb 5-piece bag rfha1000sq 25-piece bag rfha1000sr 100 pieces on 7? short reel rfha1000tr7 750 pieces on 7? reel rfha1000pcba-410 fully assembled evaluation board 50mhz to 1000mhz; 28v operation
2 of 11 rfha1000 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . absolute maximum ratings parameter rating unit drain voltage (v d )150v gate voltage (v g )-8 to +2v gate current (i g )10ma operational voltage 32 v rf- input power 31 dbm ruggedness (vswr) 12:1 storage temperature range -55 to +125 c operating temperature range (t l ) -40 to +85 c operating junction temperature (t j )200c human body model class 1c mttf (t j < 200c, 95% confidence limits)* 3 x 10 6 hours thermal resistance, r th (junction to case) measured at t c = 85c, dc bias only 6c/w * mttf - median time to failure for wear-out failure mode (30% i dss degradation) which is determined by the technology process reliability. refer to product qualification report for fit(random) failure rate. operation of this device beyond any one of these limits may ca use permanent damage. for reliable continuous operation, the devi ce voltage and current must not exceed the maximum operating values specified in the table on page two. bias conditions should also satisfy the following expression: p diss < (t j - t c )/r th j - c and t c = t case parameter specification unit condition min. typ. max. recommended operating conditions drain voltage (v dsq )2832v gate voltage (v gsq )-5-3-2v drain bias current 88 ma rf input power (p in )30dbm input source vswr 10:1 rf performance characteristics frequency range 50 1000 mhz small signal 3db bandwidth linear gain 17.5 db p out = 30dbm, 100mhz power gain 14.5 db p3db, 100mhz gain flatness 3 db p out = 30dbm, 50mhz to 1000mhz gain variation with temperature -0.02 db/c input return loss (s 11 )-10db output power (p 3db ) 41.5 dbm 50mhz to 1000mhz power added efficiency (pae) 60 % 50mhz to 1000mhz caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rohs (restriction of hazardous subs tances): compliant per eu directive 2002/95/ec.
3 of 11 rfha1000 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . rf functional tests [1], [2] v gs(q) -3 v gain 14.8 16 db p in = 10dbm power gain 13.2 14.3 db p in = 27dbm input return loss -12 -10 db output power 40.2 41.3 dbm power added efficiency (pae) 46 53 % [1] test conditions: v dsq = 28v, i dq = 88ma, cw, f = 500mhz, t = 25oc. [2] performance in a standard tuned test fixture. parameter specification unit condition min. typ. max.
4 of 11 rfha1000 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixed tu ned test fixture matched for 50mhz to 1000mhz (t = 25c, unless noted) 25 20 15 10 5 0 0 4 8 12 16 20 0 100 200 300 400 500 600 700 800 900 1000 magnitude,s 11 ,s 22 (db) magnitude,s 21 (db) frequency(mhz) smallsignalsparametersversusfrequency (v d =28v,i dq =88ma) s21 s11 s22 0 4 8 12 16 20 0 100 200 300 400 500 600 700 800 900 1000 gain(db) frequency(mhz) gainversusfrequency,p in =27dbm (cw,v d =28v,i dq =88ma) 85c 25c 40c 85 c 25 c 40 c 0 20 40 60 80 100 0 100 200 300 400 500 600 700 800 900 1000 poweraddedefficiency,pae(%) frequency(mhz) paeversusfrequency,p in =27dbm (cw,v d =28v,i dq =88ma) 85c 25c 40c 85 c 25 c 40 c 25 20 15 10 5 0 0 100 200 300 400 500 600 700 800 900 1000 inputreturnloss,irl(db) frequency(mhz) inputreturnlossversusfrequency,p in =27dbm (cw,v d =28v,i dq =88ma) 85c 25c 40c 85 c 25 c 40 c 25 20 15 10 5 0 0 4 8 12 16 20 0 100 200 300 400 500 600 700 800 900 1000 inputreturnloss(db) gain(db) frequency(mhz) gain/irlversusfrequency,p out =41dbm (cw,v d =28v,i dq =88ma) gain irl 30 40 50 60 70 80 90 0 100 200 300 400 500 600 700 800 900 1000 poweraddedefficiency,pae(%) frequency(mhz) paeversusfrequency,p out =41dbm (cw,v d =28v,i dq =88ma)
5 of 11 rfha1000 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixed tu ned test fixture matched for 50mhz to 1000mhz (t = 25c, unless noted) 0 4 8 12 16 20 0 100 200 300 400 500 600 700 800 900 1000 gain(db) frequency(mhz) gainversusfrequency (cw,v d =28v,i dq =88ma) pout=41dbm pout=40dbm pout=30dbm p out p out p out 0 20 40 60 80 100 0 100 200 300 400 500 600 700 800 900 1000 poweraddedefficiency,pae(%) frequency(mhz) poweraddedefficiencyversusfrequency (cw,v d =28v,i dq =88ma) pout=41dbm pout=40dbm pout=30dbm p out p out p out 25 20 15 10 5 0 0 100 200 300 400 500 600 700 800 900 1000 inputreturnloss,irl(db) frequency(mhz) inputreturnlossversusfrequency (cw,v d =28v,i dq =88ma) pout=41dbm pout=40dbm pout=30dbm p out p out p out 13 14 15 16 17 18 19 20 25 30 35 40 45 gain(db) p out ,outputpower(dbm) gainversusoutputpower (cw,v d =28v,i dq =88ma) freq=100mhz freq=500mhz freq=900mhz 0 20 40 60 80 100 20 25 30 35 40 45 poweraddedefficiency,pae(%) p out ,outputpower(dbm) poweraddedefficiencyversusoutputpower (cw,v d =28v,i dq =88ma) freq=100mhz freq=500mhz freq=900mhz 25 20 15 10 5 0 20 25 30 35 40 45 inputreturnloss,irl(db) p out ,outputpower(dbm) inputreturnlossversusoutputpower (cw,v d =28v,i dq =88ma) freq=100mhz freq=500mhz freq=900mhz
6 of 11 rfha1000 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixed tu ned test fixture matched for 50mhz to 1000mhz (t = 25c, unless noted) 50 45 40 35 30 25 20 15 10 5 0 0.1 1 10 100 intermodulationdistortion(imd dbc) p out ,outputpower(w pep) imdversusoutputpower (v d =28v,i dq =132ma,f1=449.5mhz,f2=450.5mhz) imd3 imd3 imd5 imd5 imd7 imd7 60 50 40 30 20 10 0 0.1 1 10 100 intermodulationdistortion(imd dbc) tonespacing(mhz) imdversustonespacing (p out =12.5wpep,v d =28v,i dq =132ma) imd3 imd3 imd5 imd5 imd7 imd7 f1=450mhztonespacing/2 f2=450mhz+tonespacing/2 12 13 14 15 16 17 18 19 20 15 20 25 30 35 40 gain(db) p out ,outputpower(dbm) gainversusoutputpower (2tone1mhzseparation,v d =28v,i dq varied,fc=450mhz) 44ma 88ma 132ma 176ma 220ma 45 40 35 30 25 20 15 10 0.1 1 10 100 imd3,intermodulationdistortion(dbc) p out ,outputpower(wpep) imd3versusoutputpower (2tone1mhzseparation,v d =28v,i dq varied,fc=450mhz) 44ma 88ma 132ma 176ma 220ma 0 5 10 15 20 25 30 35 40 0 102030405060708090100 powerdissipation(w) maximumcasetemperature( c) powerdissipationderatingcurve (basedonmaximumpackagetemperatureandr th )
7 of 11 rfha1000 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . package drawing (all dimensions in mm.) a123 : trace code 1234 : serial number package style: ceramic so8 pin names and descriptions pin name description 1vgs gate dc bias pin 2rf in rf input 3rf in rf input 4n/c no connect 5n/c no connect 6rf out/vds rf output / drain dc bias pin 7rf out/vds rf output / drain dc bias pin 8n/c no connect pkg base gnd ground
8 of 11 rfha1000 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . bias instruction for rfha1000 evaluation board esd sensitive material. please use proper esd precautions when handling device s of evaluation board. evaluation board requires additional external fan cooling. conne ct all supplies before powering evaluation board. 1. connect rf cables at rfin and rfout. 2. connect ground to the ground supply terminal, and ensure th at both the vg and vd grounds are also connected to this ground terminal. 3. apply -5v to vg. 4. apply 28v to vd. 5. increase v g until drain current reaches 88ma or desired bias point. 6. turn on the rf input. typical test data provided is measured to sma connector re ference plane, and include evaluation board / broadband bias network mismatch and losses.
9 of 11 rfha1000 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board schematic evaluation board bill of materials (bom) component value manufacturer part number c1, c2 2400pf dielectric labs inc c08bl242x-5un-x0 c11 10000pf murata electronics grm188r71h103ka01d c15 10 ? f murata electronics GRM21BF51C106ZE15L c20 3.3pf atc 100a3r3bw150xc c25 4.7 ? f murata electronics grm55er72a475ka01l r11 470 ? panasonic erj-3geyj471 l20 5.4nh coilcraft 0906-5_lb l21 0.9 ? hcoilcraft 1008af-901xjlc c21, r21 not used - - l21 c21 c1 c2 r11 c11 r21 l20 vg 1 rfin 2 rfin 3 n/c 4 n/c 5 rfout 6 rfout 7 n/c 8 gnd 9 u1 rfha1000 c20 50 microstrip 50 microstrip rf in rf out c15 c25 d v g v
10 of 11 rfha1000 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board layout device impedances frequency (mhz) rfha1000pcba-410 (50mhz to 1000mhz) z source ( ? ) z load ( ? ) 50 49.9 - j1.3 48.2 + j7.0 100 50.0 - j1.4 49.1 + j1.3 200 49.6 - j2.2 46.8 - j3.3 300 49.2 - j3.1 43.0 - j5.2 400 48.4 - j4.0 38.4 - j5.2 500 47.6 - j4.5 34.1 - j3.7 600 46.8 - j5.1 30.1 - j0.9 700 45.5 - j5.4 26.5 + j2.8 800 44.8 - j5.4 23.8 + j7.0 900 43.7 - j5.3 21.2 + j11.6 1000 43.0 - j5.0 19.3 + j16.6 note: device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak powe r performance across the entire frequency bandwidth. p1 p2 p3
11 of 11 rfha1000 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . device handling/environmental conditions rfmd does not recommend operating this device with typical drai n voltage applied and the gate pinched off in a high humidity, high temperature environment. gan hemt devices are esd sensitive materials. please use pr oper esd precautions when handling devices or evaluation boards. dc bias the gan hemt device is a depletion mode high electron mobility transistor (hemt). at zero volts v gs the drain of the device is saturated and uncontrolled drain current will destroy the transistor. the gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maxi - mum limits. rfmd recommends applying v gs = -5v before applying any v ds . rf power transistor performance capabilities are determined by the applied quiescent drain current. this drain current can be adjusted to trade off power, linearity, and efficiency charac teristics of the device. the recommended quiescent drain current (i dq ) shown in the rf typical performance table is chosen to best represent the operational charac teristics for this device, con- sidering manufacturing variations and expected performance. th e user may choose alternate conditions for biasing this device based on performance tradeoffs. mounting and thermal considerations the thermal resistance provided as r th (junction to case) represents only the pack aged device thermal characteristics. this is measured using ir microscopy capturing the device under test temp erature at the hottest spot of the die. at the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat sink but sized to prevent the measurement system from impacting th e results. knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. in order to achieve the advertised mttf, proper heat removal must be considered to maintain the junction at or below the max- imum of 200c. proper thermal design includes consideration of ambient temperature and the thermal resistance from ambi- ent to the back of the package including heat sinking syst ems and air flow mechanisms. incorporating the dissipated dc power, it is possible to calculate the junction temperature of the device

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